Si85XX UNIDIRECTIONAL AC CURRENT SENSORS

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UNIDIRECTIONAL AC CURRENT SENSORS

Silicon Labs

芯科

Specification of GaAlAs IR Emitting Diode Chip

文件：92.82 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Specification of GaAlAs IR Emitting Diode Chip

文件：92.82 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Bipolar Transistors Silicon NPN Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain: hFE = 120 to 240 (VCE = 2 V, IC = 0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.15 V (max) (IC = 1.0 A, IB = 0.1 A) (3) High-speed switching: tf = 170 ns (typ.) (IC = 1.0 A)

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TOSHIBA

东芝