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T8514VB

Specification of GaAlAs IR Emitting Diode Chip

VishayVishay Siliconix

威世科技威世科技半导体

T8514VB-SF-F

Specification of GaAlAs IR Emitting Diode Chip

VishayVishay Siliconix

威世科技威世科技半导体

T8514VB-SF-F

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:光电器件 LED 发射器 - 红外,紫外,可见光 描述:PHOTO SENSOR

Vishay Semiconductor Opto Division

Vishay Semiconductor Opto Division

Vishay Semiconductor Opto Division

TPCP8514

BipolarTransistorsSiliconNPNEpitaxialType

Applications •High-SpeedSwitching •DC-DCConverters Features (1)HighDCcurrentgain:hFE=120to240(VCE=2V,IC=0.3A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=0.15V(max)(IC=1.0A,IB=0.1A) (3)High-speedswitching:tf=170ns(typ.)(IC=1.0A)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TS8514VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8514VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedandass

VishayVishay Siliconix

威世科技威世科技半导体

TS8514VB

SpecificationofHighPowerIREmittingDiodeChip

VishayVishay Siliconix

威世科技威世科技半导体

TS8514VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8514VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES •Packagetype:chip •Packageform:singlechip •Technology:surfaceemitter •Dimensionschip(LxWxH

VishayVishay Siliconix

威世科技威世科技半导体

TS8514VB-SD-F

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8514VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedandass

VishayVishay Siliconix

威世科技威世科技半导体

TS8514VB-SD-F

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8514VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES •Packagetype:chip •Packageform:singlechip •Technology:surfaceemitter •Dimensionschip(LxWxH

VishayVishay Siliconix

威世科技威世科技半导体

TS8514VB-SF-F

SpecificationofHighPowerIREmittingDiodeChip

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    T8514VB

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Specification of GaAlAs IR Emitting Diode Chip

供应商型号品牌批号封装库存备注价格
24+
SOP
2000
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24+
SOP
2700
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TOS
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SMD
7500
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AGERE
2447
QFP
100500
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AGERE
1822+
TQFP
9852
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AGERZ
2022+
23
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LUCENT
23+
QFP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
LUCENT
24+
原封装
1580
原装现货假一罚十
询价
AGERE
0429+
qfp
49
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AGERE
24+
qfp
12000
原装正品房间现货 只做原装
询价
更多T8514VB供应商 更新时间2025-7-12 15:30:00