Specification of GaAlAs IR Emitting Diode Chip

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VishayVishay Siliconix

威世威世科技公司

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：光电器件 LED 发射器 - 红外，紫外，可见光 描述：PHOTO SENSOR

Vishay Semiconductor Opto Division

Bipolar Transistors Silicon NPN Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain: hFE = 120 to 240 (VCE = 2 V, IC = 0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.15 V (max) (IC = 1.0 A, IB = 0.1 A) (3) High-speed switching: tf = 170 ns (typ.) (IC = 1.0 A)

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TOSHIBA

东芝

Specification of High Power IR Emitting Diode Chip

DESCRIPTION TS8514VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip (L x W x H

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VishayVishay Siliconix

威世威世科技公司

Specification of High Power IR Emitting Diode Chip

文件：90.59 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司