丝印：8514；Package：PS-8；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain: hFE = 120 to 240 (VCE = 2 V, IC = 0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.15 V (max) (IC = 1.0 A, IB = 0.1 A) (3) High-speed switching: tf = 170 ns (typ.) (IC = 1.0 A)

文件：303.55 Kbytes 页数：7 Pages

TOSHIBA

东芝

Power transistor for high-speed switching applications

Application Scope High-speed switching / DC/DC converters \n

Toshiba

东芝

Specification of High Power IR Emitting Diode Chip

DESCRIPTION TS8514VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip (L x W x H

文件：87.29 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Specification of High Power IR Emitting Diode Chip

文件：90.59 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Specification of High Power IR Emitting Diode Chip

DESCRIPTION TS8514VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and ass

文件：86.76 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司