SI7716ADN

N-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®GenIIIpowerMOSFET •100RgtestedandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •DC/DCconversion -Systempower

SI7716ADN

Marking：7716A；Package：PowerPAK1212-8；N-Channel 30-V (D-S) MOSFET

SI7716ADN

N-Channel MOSFET uses advanced trench technology

SI7716ADN_V01

N-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®GenIIIpowerMOSFET •100RgtestedandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •DC/DCconversion -Systempower

TC7716FTG

ResidentialandCommercialRenewableEnergySystem(upto1000VACor1500VDC)VoltageBoosterController

Features Process:CD-0.13 Powersupplyvoltage(VDD):7.2Vto14.0V Startupvoltage:7.0V Builtin12bitADconverter(ADC) UARTI/F H-SWsoftstart Voltageboosterconverter+H-SWcontrollerorfull-bridge LLCcontroller OutputpulseDuty Forvoltageboostercontroll

UZ7716

POWERZENERS

DESCRIPTION Fused-in-glass,metallurgicallybonded6wattleadedzenersand10wattstud-type-zeners. FEATURES ●HighSurgeRating ●SmallPhysicalSize ●LeadedandStudPackagesAvailable

UZ7716

POWERZENERS6Watt,Military,10WattMilitary

UZ7716

6WATTPOWERZENERS

VSC7716

1.25GbpsBurstModeTransimpedanceAmplifierforGE-PON(EPON)Systems

GENERALDESCRIPTION: TheVSC7716deviceisatransimpedanceamplifier(TIA)forGE-PONONUandOLTapplications.TheoutputsettlingtimeissufficientlyfasttomeetGE-PONOLTreceiverrequirementsbutslowenoughtopassGE-PONONUtraffic.TheVSC7716deviceisequippedwithanoptionalpho