Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –3.8 A, –20 V, RDS(ON) = 0.043 Ω

文件：98.57 Kbytes 页数：5 Pages

Fairchild

仙童半导体

Dual P-Channel 2.5-V (G-S) MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET TrenchFET Power MOSFETs 2.5-V Rated

文件：58.1 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual P-Channel 2.5-V (G-S) MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET TrenchFET Power MOSFETs 2.5-V Rated

文件：58.1 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual P-Channel 2.5-V (G-S) MOSFET

Vishay

威世