N&P-Channel Complementary MOSFET

General Features «+ N-Channel © Vos=30V. o=B.0A Rosny =17m0@ Vos=10V Rosco =24m0@Vos=4 5V + P-Channel * Vos=-30V,Ip=-6A Rosn =40mQ @Ves=-10V Rosco =60mQ @Vos=-45V «High Power and current handing capabilly «Lead ree products acquired « Surace Mount Package Application

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TECHPUBLIC

台舟电子

30V Complementary PowerTrench MOSFET

General Description\nThis complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Q1: N-Channel\n   6 A, 30 V RDS(on) = 28 mΩ @ VGS = 10V\n                RDS(on) = 35 mΩ @ VGS = 4.5V\n• Q2: P-Channel\n   –6 A, –30 V RDS(on) = 32 mΩ @ VGS = –10V\n                   RDS(on) = 45 mΩ @ VGS = –4.5VApplications\n• DC/DC converter\n• Power management ;

ONSEMI

安森美半导体