30V Complementary PowerTrench MOSFET

General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS

文件：56.76 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

30V Complementary PowerTrench MOSFET

General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS

文件：56.76 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

N- and P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：121.46 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

N- and P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：120.52 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

N- and P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：120.52 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

文件：1.23341 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

N-and P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：261.75 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-and P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：261.75 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

N&P-Channel Complementary MOSFET

General Features «+ N-Channel © Vos=30V. o=B.0A Rosny =17m0@ Vos=10V Rosco =24m0@Vos=4 5V + P-Channel * Vos=-30V,Ip=-6A Rosn =40mQ @Ves=-10V Rosco =60mQ @Vos=-45V «High Power and current handing capabilly «Lead ree products acquired « Surace Mount Package Application

文件：4.04755 Mbytes 页数：10 Pages

TECHPUBLIC

台舟电子

30V Complementary PowerTrench MOSFET

General Description\nThis complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Q1: N-Channel\n   6 A, 30 V RDS(on) = 28 mΩ @ VGS = 10V\n                RDS(on) = 35 mΩ @ VGS = 4.5V\n• Q2: P-Channel\n   –6 A, –30 V RDS(on) = 32 mΩ @ VGS = –10V\n                   RDS(on) = 45 mΩ @ VGS = –4.5VApplications\n• DC/DC converter\n• Power management ;

ONSEMI

安森美半导体