Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perf

文件：240.37 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

Dual N & P-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

N- and P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

文件：132.94 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

N- and P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

文件：132.94 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perf

文件：240.37 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

文件：1.23256 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

N- and P-Channel 30-V (D-S) MOSFET

文件：65.61 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

N- and P-Channel 30-V (D-S) MOSFET

文件：92.88 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

N- and P-Channel 30-V (D-S) MOSFET

文件：65.61 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

N- and P-Channel 30 V (D-S) MOSFET

文件：1.2332 Mbytes 页数：14 Pages

VBSEMI

微碧半导体