P-Channel MOSFET

Features ● VDS(V)=-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON)

文件：1.64281 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：D3JSE；Package：SOT-23；P-Channel MOSFET

Features VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON)

文件：1.82173 Mbytes 页数：5 Pages

UMW

友台半导体

MOSFET

MTW

美台微

-20V/-4.2A P Channel Advanced Power MOSFET

XW

芯微半导体

场效应管

HXY MOSFET

华轩阳电子

丝印：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description The Si2323CDS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-4.9A RDS(ON)

文件：2.6724 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：20P7C；Package：SOT-23；20V P-Channel Enhancement Mode MOSFET

Application Load/Power Switching Interfacing Switching Logic Level Shift

文件：1.74422 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

丝印：D3JSE；Package：SOT-23；P-Channel MOSFET

Features ● VDS(V)=-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON)

文件：1.64281 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：D3JSE；Package：SOT-23；P-Channel MOSFET

Features VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON)

文件：1.82173 Mbytes 页数：5 Pages

UMW

友台半导体

丝印：P3***；Package：SOT-23；P-Channel 20 V (D-S) MOSFET

文件：223.32 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司