BAV170

Marking：P3；Package：SOT-23；SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES

FEATURES Sufacemountpackageideallysuitedforautomaticinsertion. Verylowleakagecurrent.2pAtypicalatVR=75V. Lowcapacitance.2pFmaxatVR=0V,f=1MHz LeadfreeincompliancewithEURoHS2011/65/EUdirective

BAV170W

Marking：P3；Package：SOT-323；SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE

FEATURES Sufacemountpackageideallysuitedforautomaticinsertion. Verylowleakagecurrent.2pAtypicalatVR=75V. Lowcapacitance.4pFmaxatVR=0V,f=1MHz LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

BFG403W

Marking：P3；Package：SOT-343R；RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

BFG403W

Marking：P3；Package：SOT-343R；NPN 17 GHz wideband transistor

DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES •Lowcurrent •Veryhighpowergain •Lownoisefigure •Hightransitionfrequency •Verylowfeedbackcapacitance. APPLICATIONS

BZX84W-C4V7

Marking：P3；Package：SOT323；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotoleranceseries:±2and±5 3.Applications •Gene

BZX84W-C4V7-Q

Marking：P3；Package：SC-70；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotoleranceseries:±2and±5 •Qualifiedaccordingto

D6V3H1U2LPQ-7B

Marking：P3；Package：X1-DFN1006-2；1 CHANNEL UNIDIRECTIONAL TVS

Features -LowProfilePackage(0.53mmMax)andUltra-SmallPCBFootprint Area(1.08mm*0.68mmMax)SuitableforCompactPortable Electronics -ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV -1ChannelofESDProtection -LowChannelInputCapacitance -Totall

ISL9016IRUJBZ-T

Marking：P3；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mADualLDOwithLowNoise,HighPSRR,andLowIQ ISL9016isahighperformancedualLDOcapableofprovidingupto150mAcurrentoneachchannel.ItfeaturesalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto4.7µFwithanESRofupto200mΩ. Features •

MT4S300T

Marking：P3；Package：TESQ；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

MT4S300U

Marking：P3；Package：USQ；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf