IGBT

SP Semi

瞬雷电子

SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features (1) Chip design of 3rd generation (2) Low forward voltage : VF (Per Leg) = 1.27 V (typ.) (3) Low total capacitive charge: Qc (Per Leg) = 57 nC (typ.) (4) Low reverse curre

文件：450.26 Kbytes 页数：7 Pages

TOSHIBA

东芝

General purpose inverters

文件：820.86 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

文件：769.26 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

1200V, 20A Trench IGBT

文件：721.12 Kbytes 页数：9 Pages

Fairchild

仙童半导体