首页 >SGR20N40LTM>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature pp SwitchMo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=19.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
400VN-ChannelMOSFET Features •19.5A,400V,RDS(on)=0.22Ω@VGS=10V •Lowgatecharge(typical60nC) •LowCrss(typical45pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
SMARTDISCRETESInternallyClamped,N-ChannelIGBT SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETESmonolithiccircuitryforusageasanIgnitionCoilDriver. •TemperatureCompensatedGate–C | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SMARTDISCRETESInternallyClamped,N-ChannelIGBT SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETESmonolithiccircuitryforusageasanIgnitionCoilDriver. •TemperatureCompensatedGate–C | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •CommonAnodeConfiguration •LeadFreeByDesign/RoHSCompliant(Note3) •GreenDevice(Note4) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
Highinputimpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
GeneralDescription GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Highinputimpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
产品属性
- 产品编号：
SGR20N40LTM
- 制造商：
onsemi
- 类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装：
管件
- IGBT 类型：
沟道
- 不同 Vge、Ic 时 Vce(on)（最大值）：
8V @ 4.5V，150A
- 输入类型：
标准
- 工作温度：
-40°C ~ 150°C（TJ）
- 安装类型：
表面贴装型
- 封装/外壳：
TO-252-3，DPak（2 引线 + 接片），SC-63
- 供应商器件封装：
TO-252AA
- 描述：
IGBT 400V 45W DPAK
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
3000 |
自己现货 |
询价 | ||||
FSC |
05+ |
原厂原装 |
7551 |
只做全新原装真实现货供应 |
询价 | ||
FAIRCHI |
18+ |
TO252 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
Fairchild/ON |
22+ |
DPak |
9000 |
原厂渠道,现货配单 |
询价 | ||
ON Semiconductor |
2022+ |
D-Pak |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
Fairchild仙童 |
22+ |
DPAK |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
Fairchild仙童 |
22+ |
DPAK |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
FAIRCHIL |
2025+ |
TO-252-2 |
5425 |
全新原厂原装产品、公司现货销售 |
询价 | ||
Fairchild/ON |
23+ |
DPak |
8000 |
只做原装现货 |
询价 | ||
Fairchild仙童 |
25+ |
DPAK |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 |
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