Short Circuit Rated IGBT

文件：563.62 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

600 V, 50 A Short Circuit Rated IGBT

General Description Fairchild®’s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general i

文件：494.9 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

Short Circuit Rated IGBT

General Description Fairchild®’s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general i

文件：623.54 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

600 V, 50 A Short Circuit Rated IGBT

General Description Fairchild®’s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general i

文件：494.9 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

IGBT，600V，50A，短路额定

飞兆半导体的 RUFD 绝缘栅极双极性晶体管 (IGBT) 系列提供低导通和开关损耗，以及短路耐用性。RUFD 系列专为电机控制、不间断电源 (UPS) 和一般逆变器等短路耐用性是必需功能的应用而设计。 •50A, 600V, TC = 100°C\n•低饱和电压：V CE(sat) = 2.2 V @ I C = 50A\n•典型下降时间。. . . . . . . . TJ = 125°C时为0.261ns\n•高速开关\n•高输入阻抗\n•短路额定值;

ONSEMI

安森美半导体

IGBT 600V 80A 250W TO264

ONSEMI

安森美半导体

Package：TO-264-3，TO-264AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 80A TO264-3

ONSEMI

安森美半导体

Package：TO-264-3，TO-264AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 80A 250W TO264

ONSEMI

安森美半导体