Ultra-Fast IGBT

General Description Fairchilds UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed swi

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Fairchild

仙童半导体

Ultrafast IGBT

DESCRIPTION • High speed switching • High input impedance • Low saturation voltage APPLICATIONS • AC & DC motor controls • General purpose inverters • Servo controls

文件：260.14 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：G160N60；Package：TO-264；Ultrafast IGBT

General Description Fairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed

文件：662.13 Kbytes 页数：8 Pages

Fairchild

仙童半导体

600V，50A 短路额定 IGBT

安森美半导体的 RUFD 系列绝缘门极双极晶体管 (IGBT) 提供低导通和开关损耗以及短路耐受性。RUFD 系列适用于电机控制、UPS 和短路耐受性为必需功能的通用逆变器。 •高速开关\n•低饱和电压：V CE(sat) = 2.1 V @ I C = 80A\n•高输入阻抗\n•CO-PAK、IGBT及FRD：t rr= 75ns（典型值）;

ONSEMI

安森美半导体

Ultra-Fast IGBT

ONSEMI

安森美半导体

Package：TO-264-3，TO-264AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 160A 250W TO264

ONSEMI

安森美半导体

Package：TO-264-3，TO-264AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 160A 250W TO3PF

ONSEMI

安森美半导体