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FGH40N60SFD	文件：806.08 Kbytes Page：9 Pages	600V,40AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewsesriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Lo	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60SFDTU	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60SFDTU	文件：291.77 Kbytes Page：9 Pages	600V,40AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewsesriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Lo	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60SFDTU	文件：815.57 Kbytes Page：9 Pages	IGBT-FieldStop600V,40A Description UsingNovelFieldStopIGBTTechnology,ONSemiconductor’s newseriesofFieldStopIGBTsoffertheoptimumperformancefor AutomotiveChargers,Inverter,andotherapplicationswherelow conductionandswitchinglossesareessential. Features •HighCurrentCapability •LowS	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
FGH40N60SFTU	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60SFTU	文件：683.15 Kbytes Page：8 Pages	600V,40AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewsesriesofFieldStopIGBTsoffertheoptimumperformanceforInverter,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Lowsaturat	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60SMD	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60SMDF	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60SMDF	文件：357.9 Kbytes Page：10 Pages	600V,40AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewseriesoffieldstop2ndgenerationIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welder,telecom,ESSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •MaximumJunc	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60UF	文件：710.57 Kbytes Page：8 Pages	600V,40AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VCE	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60UF	文件：308.19 Kbytes Page：8 Pages	600V,40AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VCE	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60UFD	文件：793.68 Kbytes Page：9 Pages	600V,40AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewsesriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Lowsaturati	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60UFDTU	文件：291.84 Kbytes Page：9 Pages	HighCurrentCapability GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewsesriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Lowsaturati	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60UFDTU	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60UFTU	文件：308.19 Kbytes Page：8 Pages	600V,40AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VCE	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH40N60UFTU	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGI40N60SF	文件：728.76 Kbytes Page：8 Pages	600V,40AFieldStopIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGI40N60SFTU	文件：728.76 Kbytes Page：8 Pages	600V,40AFieldStopIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G40N60	文件：601.42 Kbytes Page：8 Pages	Ultra-FastIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G40N60UFD	文件：577.53 Kbytes Page：8 Pages	UltrafastIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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产品属性

产品编号：
SGH40N60UFTU
制造商：
onsemi
类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
包装：
管件
不同 Vge、Ic 时 Vce(on)（最大值）：
2.6V @ 15V，20A
开关能量：
160µJ（开），200µJ（关）
输入类型：
标准
25°C 时 Td（开/关）值：
15ns/65ns
测试条件：
300V，20A，10 欧姆，15V
工作温度：
-55°C ~ 150°C（TJ）
安装类型：
通孔
封装/外壳：
TO-3P-3，SC-65-3
供应商器件封装：
TO-3P
描述：
IGBT 600V 40A TO3P

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市浩睿泽电子科技有限公司	SGH40N60UFTU	onsemi/安森美	新批次	TO-3P	4500		询价
深圳市高捷芯城科技有限公司	SGH40N60UFTU	onsemi(安森美)	23+	TO-3P	1224	原厂订货渠道,支持BOM配单一站式服务	询价
深圳市珩瑞科技有限公司	SGH40N60UFTU	FAIRCHILD/仙童	21+	TO-3P	6000	原装正品	询价
深圳市坤融电子科技有限公司	SGH40N60UFTU	FAIRCHILD/仙童	2022+	TO-3P	240	原厂授权代理价格绝对优势	询价
深圳市创新迹电子有限公司	SGH40N60UFTU	FAIRCHILD/仙童	2021+	TO-3P	9000	原装现货,随时欢迎询价	询价
千层芯半导体(深圳)有限公司	SGH40N60UFTU	FSC	17+	TO-3P	2026	全新原装环保现货	询价
深圳市恒创达实业有限公司	SGH40N60UFTU	FSC	17+	TO-3P	6200	100%原装正品现货	询价
深圳市瑞新盛科技有限公司	SGH40N60UFTU	FAIRCHILD		TO-3P	20000	原装正品	询价
深圳市壹芯创科技有限公司	SGH40N60UFTU	FSC	22+	TO-3P	5000	原装现货库存.价格优势	询价
深圳市华斯顿科技有限公司	SGH40N60UFTU	FAIRCHILD	22+23+	TO-3P	10478	绝对原装正品全新进口深圳现货	询价

更多SGH40N60UFTU供应商更新时间2024-5-22 14:18:00

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