Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -60V ■ Low RDS(ON) : 0.22 Ω (Typ.)

文件：250.44 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● 175oC Operating Temperature ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.912 Ω (Typ.)

文件：229.65 Kbytes 页数：7 Pages

Fairchild

仙童半导体

P-channel Enhancement Mode Power MOSFET

Features  VDS= -100V, ID= -13A RDS(ON)

文件：861.69 Kbytes 页数：4 Pages

Bychip

百域芯

P-channel Enhancement Mode Power MOSFET

Features  VDS= -100V, ID= -13A RDS(ON)

文件：869.54 Kbytes 页数：4 Pages

Bychip

百域芯

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● 175oC Operating Temperature ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.225 Ω (Typ.)

文件：233.28 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● 175°C Operating Temperature ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.161 Ω (Typ.)

文件：202.55 Kbytes 页数：6 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -200V ■ Low RDS(ON) : 0.581 Ω (Typ.)

文件：255.06 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 mA (Max.) @ VDS = -250V ■ Low RDS(ON) : 0.876 Ω (Typ.)

文件：257.19 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5 W ID = -11 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 mA (Max.) @ VDS = -200V ● Low RDS(ON) : 0.344 W (Typ.)

文件：263.5 Kbytes 页数：7 Pages

Fairchild

仙童半导体

P-CHANNEL POWER MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -250V ■ Low RDS(ON) : 0.549 Ω (Typ.)

文件：266.65 Kbytes 页数：7 Pages

Fairchild

仙童半导体