Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● 175oC Operating Temperature ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.225 Ω (Typ.)

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc P-Channel MOSFET Transistor

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ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体

Advanced Power MOSFET

文件：233.32 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipa

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VishayVishay Siliconix

威世

Repetitive avalanche rated

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It pro

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VishayVishay Siliconix

威世