Advanced Power MOSFET

FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ 175oC Operating Temperature ❐ Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ❐ Low RDS(ON) : 0.106 Ω (Typ.)

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Fairchild

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Advanced Power MOSFET

BVDSS = -60 V RDS(on) = 0.5Ω ID = -6.7 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● 175℃ Operating Temperature ● Lower Leakage Current : 10 µA (Max.) @ VDS

文件：278.86 Kbytes 页数：7 Pages

Fairchild

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文件：850.69 Kbytes 页数：9 Pages

FCI-CONNECTOR

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