Advanced Power MOSFET

BVDSS = -60 V RDS(on) = 0.5Ω ID = -6.7 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● 175℃ Operating Temperature ● Lower Leakage Current : 10 µA (Max.) @ VDS

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FAIRCHILD

仙童半导体

Power MOSFET

文件：277.86 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

P-Channel 60-V (D-S) MOSFET

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VBSEMI

微碧半导体

Repetitive Avalanche Rated

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：277.14 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司