ZI1B456F Series for FM Multiplexers.

文件：605.2 Kbytes 页数：1 Pages

YIC

裕中

D-Band Externally Biased Balanced Up-Converter

FEATURES Full Waveguide Band Coverage Low LO Power Requirement Low Conversion Loss High IF Frequency up to 40 GHz APPLICATIONS Radar Systems Communication Systems Test Equipment

文件：303.44 Kbytes 页数：3 Pages

ERAVANT

D-Band Balanced Up-Converter

FEATURES Full Waveguide Band Coverage Low Conversion Loss High IF Frequency up to 40 GHz APPLICATIONS Radar Systems Communication Systems Test Equipment

文件：281.9 Kbytes 页数：3 Pages

ERAVANT

F-Band Externally Biased Balanced Up-Converter

FEATURES Full Waveguide Band Coverage Low LO Power Requirement Low Conversion Loss High IF Frequency up to 20 GHz APPLICATIONS Radar Systems Communication Systems Test Equipment

文件：295.43 Kbytes 页数：3 Pages

ERAVANT

F-Band Externally Biased Balanced Up-Converter

FEATURES Full Waveguide Band Coverage Low LO Power Requirement Low Conversion Loss High IF Frequency up to 20 GHz APPLICATIONS Radar Systems Communication Systems Test Equipment

文件：286.25 Kbytes 页数：3 Pages

ERAVANT

Q-Band Balanced Up-Converter

FEATURES Full Waveguide Band Coverage Low Conversion Loss High IF Frequency up to 17 GHz APPLICATIONS Radar Systems Communication Systems Test Equipment

文件：310 Kbytes 页数：3 Pages

ERAVANT

Ka-Band Balanced Up-Converter

FEATURES Full Waveguide Band Coverage Low Conversion Loss High IF Frequency up to 13.5 GHz APPLICATIONS Radar Systems Communication Systems Test Equipment

文件：275.25 Kbytes 页数：3 Pages

ERAVANT

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -60V ■ Lower RDS(ON) : 0.22 Ω (Typ.)

文件：261.7 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

K-Band Balanced Up-Converter

FEATURES Full Waveguide Band Coverage Low Conversion Loss High IF Frequency up to 8.5 GHz APPLICATIONS Radar Systems Communication Systems Test Equipment

文件：276.15 Kbytes 页数：3 Pages

ERAVANT

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ● Lower RDS(ON) : 0.206 Ω (Typ.)

文件：230.52 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司