Advanced Power MOSFET

FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ν Lower RDS(ON) : 0.106 Ω (Typ.)

文件：237.42 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Lower RDS(ON) : 0.912 Ω (Typ.)

文件：253.17 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -100V ■ Lower RDS(ON) : 0.444 Ω (Typ.)

文件：259.62 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -100V ■ Lower RDS(ON) : 0.225 Ω (Typ.)

文件：273.15 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V ν Lower RDS(ON) : 3.15 Ω (Typ.)

文件：311.9 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

200V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：628.91 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Filters

Features 1. Center frequency range between 450 to 470kHz are available standard tolerance of +/-2kHz. 2. For frequency synthesizers, center frequencies of 450, 459 and 468kHz are available standard tolerance of +/-1kHz.

文件：342.97 Kbytes 页数：3 Pages

MuRata

村田

Filters

Features 1. Center frequency range between 450 to 470kHz are available standard tolerance of +/-2kHz. 2. For frequency synthesizers, center frequencies of 450, 459 and 468kHz are available standard tolerance of +/-1kHz.

文件：342.97 Kbytes 页数：3 Pages

MuRata

村田

Filters

Features 1. Center frequency range between 450 to 470kHz are available standard tolerance of +/-2kHz. 2. For frequency synthesizers, center frequencies of 450, 459 and 468kHz are available standard tolerance of +/-1kHz.

文件：364.53 Kbytes 页数：3 Pages

MuRata

村田

Filters

Features 1. Center frequency range between 450 to 470kHz are available standard tolerance of +/-2kHz. 2. For frequency synthesizers, center frequencies of 450, 459 and 468kHz are available standard tolerance of +/-1kHz.

文件：364.53 Kbytes 页数：3 Pages

MuRata

村田