N-Channel Power MOSFET 100V, 17A, 111m, Single TP/TP-FA

Features • ON-resistance RDS(on)1=85mΩ(typ.) • Input Capacitance Ciss=1030pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

文件：420.09 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET 60V, 20A, 51m, Single TP/TP-FA

Features • ON-resistance RDS(on)1=39mΩ(typ.) • Input Capacitance Ciss=750pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

文件：424.06 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=39mΩ(typ) • Input Capacitance Ciss=750pF(typ) • 4V drive • Halogen free compliance

文件：345.71 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel Power MOSFET 60V, 20A, 51m, Single TP/TP-FA

Features • ON-resistance RDS(on)1=39mΩ(typ.) • Input Capacitance Ciss=750pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

文件：424.06 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET 60V, 20A, 51m, Single TP/TP-FA

Features • ON-resistance RDS(on)1=39mΩ(typ.) • Input Capacitance Ciss=750pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

文件：424.06 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

N-Channel 650V (D-S)Power MOSFET

文件：1.08194 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件：1.08635 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件：1.08645 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 100-V (D-S) MOSFET

文件：1.05335 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

文件：2.01903 Mbytes 页数：4 Pages

DOINGTER

杜因特