N-Channel Power MOSFET

N-Channel Power MOSFET 600V, 1.5A, 8.1Ω, Single TP/TP-FA Features • ON-resistance RDS(on)=6.2Ω(typ.) • Protection diode in

文件：416.9 Kbytes 页数：9 Pages

ONSEMI

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General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)=6.2Ω(typ.)

文件：357.07 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel 650V (D-S)Power MOSFET

文件：1.08194 Mbytes 页数：9 Pages

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General-Purpose Switching Device Applications

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.1Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：275.2 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET

N-Channel Power MOSFET 600V, 1.5A, 8.1Ω, Single TP/TP-FA Features • ON-resistance RDS(on)=6.2Ω(typ.) • Protection diode in

文件：416.9 Kbytes 页数：9 Pages

ONSEMI

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.1Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：285.01 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET

N-Channel Power MOSFET 600V, 1.5A, 8.1Ω, Single TP/TP-FA Features • ON-resistance RDS(on)=6.2Ω(typ.) • Protection diode in

文件：416.9 Kbytes 页数：9 Pages

ONSEMI

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N-Channel 650 V (D-S) MOSFET

文件：1.08635 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件：1.08645 Mbytes 页数：9 Pages

VBSEMI

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