N-Channel Power MOSFET 100V, 17A, 111m, Single TP/TP-FA

Features • ON-resistance RDS(on)1=85mΩ(typ.) • Input Capacitance Ciss=1030pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

文件：420.09 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=85mΩ(typ.) • Input Capacitance Ciss=1030pF(typ.) • 4V drive • Halogen free compliance

文件：82.75 Kbytes 页数：4 Pages

SANYO

三洋

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

文件：1.43583 Mbytes 页数：4 Pages

BYCHIP

百域芯

N 沟道，功率 MOSFET，100V，17A，111mΩ，单 TP/TP-FA

SFT1445 是一款 N 沟道功率 MOSFET，100V，17A，111mΩ，单 TP/TP-FA，适用于通用开关设备应用。 • ON-resistance RDS(on)1 = 85mΩ (typ)\n• 4V drive \n• Input Capacitance Ciss = 1030pF (typ)\n• Halogen free compliance\n• Protection diode in;

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 111mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：275.32 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET 100V, 17A, 111m, Single TP/TP-FA

Features • ON-resistance RDS(on)1=85mΩ(typ.) • Input Capacitance Ciss=1030pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

文件：420.09 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 111mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：285.14 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET 100V, 17A, 111m, Single TP/TP-FA

Features • ON-resistance RDS(on)1=85mΩ(typ.) • Input Capacitance Ciss=1030pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

文件：420.09 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

N-Channel MOSFET uses advanced trench technology

文件：1.18304 Mbytes 页数：4 Pages

DOINGTER

杜因特

N-Channel MOSFET uses advanced trench technology

文件：2.49771 Mbytes 页数：4 Pages

DOINGTER

杜因特