N-Channel Power MOSFET 35V, 11A, 25m, Single TP/TP-FA

Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：409.29 Kbytes 页数：9 Pages

ONSEMI

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Power MOSFET

Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：359.61 Kbytes 页数：6 Pages

ONSEMI

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General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Motor drive application. • Low ON-resistance. • 4V drive.

文件：91.41 Kbytes 页数：4 Pages

SANYO

三洋

Power MOSFET

Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：359.61 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET 35V, 11A, 25m, Single TP/TP-FA

Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：409.29 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET 35V, 11A, 25m, Single TP/TP-FA

Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：409.29 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：359.61 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：359.61 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：359.61 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET 35V 11A 25mOhm Single N-Channel DPAK

This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimizegate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements. Low On-Resistance\nImproves efficiency by reducing conduction losses\nHigh Speed Switching\nReduces dynamic power losses\nLow Gate Charge\nEase of drive, faster turn-on\nESD Diode - Protected Gate\nESD resistance\nPb-Free and RoHS Compliance\nEnvironment friendliness;

ONSEMI

安森美半导体