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SFT2012

HIGH ENERCY NPN TRANSISTOR

[SSDI] 2N5094AND2N5096 HIGHVOLTAGEPNPTRANSISTOR450-500VOLTS SFT2010,SFT2012,SFT2014 200AMPHIGHENERGYNPNTRANSISTORVCEO100,120,140VOLTS

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未分类制造商

SFT2012

200 AMP 100-140 VOLTS NPN TRANSISTOR

200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage

SSDI

Solid States Devices, Inc

SFT2012

High Energy NPN Transistor

200AMP100–140VoltHighEnergyNPNTransistor Features: •BVCBO=250VMIN •600WattsPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighReliabilityConstruction •PlanarChipConstructionwithLowLeakageandVeryFastSwitching •TX,TXV,S-Leve

SSDI

Solid States Devices, Inc

SFT2012/3

200 AMP 100-140 VOLTS NPN TRANSISTOR

200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage

SSDI

Solid States Devices, Inc

SFT2012SLASH3

200 AMP 100-140 VOLTS NPN TRANSISTOR

200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage

SSDI

Solid States Devices, Inc

SG2012

400mA,LowPower,LowDropout,LinearRegulators

GENERALDESCRIPTION TheSG2012low-power,low-dropout,CMOSlinearvoltageregulatorsoperatefroma2.5Vto5.5Vinputanddeliverupto400mA.Theyareperfectchoiceforlowvoltage,lowpowerapplications.Anultralowgroundcurrent(120µAat400mAoutput)makesthemattractiveforbatteryo

SGMICROSG Micro Corp

圣邦股份圣邦微电子(北京)股份有限公司

SG2012

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2012

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2012

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

Description Crossreferenceto5962-86058012A,5962-86058012,86058012 TheSG2800seriesintegrateseightNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.A

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2012

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

详细参数

  • 型号:

    SFT2012

  • 功能描述:

    HIGH ENERCY NPN TRANSISTOR

供应商型号品牌批号封装库存备注价格
ST/MOTO
23+
CAN to-39
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
ST
23+
CAN to-39
16900
正规渠道,只有原装!
询价
ST
25+
CAN to-39
16900
原装,请咨询
询价
ST
2511
CAN to-39
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
Luminus
20000
询价
24+
N/A
50000
一级代理-主营优势-实惠价格-不悔选择
询价
ST
24+
CAN3
500
原装现货假一罚十
询价
ST
专业铁帽
CAN3
500
原装铁帽专营,代理渠道量大可订货
询价
ST
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
询价
ST
22+
CAN to-39
16900
支持样品,原装现货,提供技术支持!
询价
更多SFT2012供应商 更新时间2025-7-24 16:32:00