NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers

文件：62.03 Kbytes 页数：4 Pages

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, relay drivers, lamp drivers, mot

文件：62.13 Kbytes 页数：4 Pages

SANYO

三洋

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.165V(Max)( IC= 1A; IB= 0.1A) • Fast -Switching speed • High allowable power dissipation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • DC/DC converter •

文件：262.39 Kbytes 页数：3 Pages

ISC

无锡固电

Bipolar Transistor

Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drive

文件：412.63 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Bipolar Transistor

Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drive

文件：412.63 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Bipolar Transistor

Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drive

文件：412.63 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Bipolar Transistor, 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA

SFT1202 is Bipolar Transistor, 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA for High-Voltage Switching Applications. • Adoption of FBET, MBIT process\n• Large current capacity\n• Low collector-to-emitter saturation voltage\n• High-speed switching\n• High allowable power dissipation;

ONSEMI

安森美半导体

Package：TO-251-3 短引线，IPak，TO-251AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 150V 2A TP

ONSEMI

安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 150V 2A TPFA

ONSEMI

安森美半导体