P-Channel Power MOSFET ??0V, ??2A, 62m, Single TP/TP-FA

Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：411.65 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Power MOSFET

Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：357.46 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

P-Channel MOSFET uses advanced trench technology

文件：1.22226 Mbytes 页数：4 Pages

DOINGTER

杜因特

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 62mΩ(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：287.21 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel 60 V (D-S) MOSFET

文件：977.84 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P-Channel Power MOSFET ??0V, ??2A, 62m, Single TP/TP-FA

Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：411.65 Kbytes 页数：9 Pages

ONSEMI

安森美半导体