STC9014N

NPNSiliconTransistor

Description •Generalpurposeapplication •Switchingapplication Features •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) •ComplementarypairwithSTA9015N

STC9014SF

NPNSiliconTransistor

Description •Generalpurposeapplication •Switchingapplication Features •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) •ComplementarypairwithSTA9015SF

STS9014

NPNSiliconTransistor

STS9014

NPNSiliconTransistor

Description •Generalpurposeapplication •Switchingapplication Features •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) •Lownoise:NF=10dB(Max.)atf=1KHz •ComplementarypairwithSTS9015

STS9014

NPNSiliconTransistor

TEC9014

SILICONNPNEPITAXIALTYPE(PCTPROCESS)

AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS. DRIVERSTAGEAMPLIFIERAPPLICATIONS. FEATURES .HighVoltageandHighCurrent :VcEO=50V(Min.),Ic=150mA(Max.) .LowNoise:NF=0.9dB(Typ.)atf=lkHz .ComplementarytoTEC9015

U9014

AdvancedPowerMOSFET

FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •LowerLeakageCurrent:10µA(Max.)@VDS=-60V •LowerRDS(ON):0.362Ω(Typ.)