SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIE R APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Voltage and High Current : VcEO=50V(Min.), Ic=150mA(Max.) . Low Noise : NF=0. 9dB(Typ. ) at f=lkHz . Complementary to TEC9015

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TOSHIBA

东芝

Advanced Power MOSFET

FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current : 10 µA (Max.) @ VDS = -60V • Lower RDS(ON) : 0.362 Ω (Typ.)

文件：228.74 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V

文件：27.43 Kbytes 页数：1 Pages

WINGS

永盛电子

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors NPN silicon

文件：698.38 Kbytes 页数：1 Pages

DAYA

大亚电器

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be

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DGNJDZ

南晶电子