Advanced Power MOSFET

FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current : 10 µA (Max.) @ VDS = -60V • Lower RDS(ON) : 0.362 Ω (Typ.)

文件：228.74 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

文件：228.74 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc P-Channel MOSFET Transistor

文件：345.6 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

文件：839.16 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

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