T2955V

N-Channel60V(D-S)MOSFET

TGF2955

40WattDiscretePowerGaNonSiCHEMT

TIP2955

SiliconPNPPowerTransistor

DESCRIPTION •ExcellentSafeOperatingArea •DCCurrentGain-:hFE=20-70@lc=-4A •Collector-EmitterSaturationVoltage-:VCE(sat)=-1.1V(Max)@lc=-4A •ComplementtoTypeTIP3055 APPLICATIONS •Designedforgeneral-purposeswitchingandamplifierapplications.

TIP2955

ComplementarySiliconPowerTransistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS •DCCurrentGain−hFE=20-70@IC=4.0Adc •Collector−EmitterSaturationVoltage−VCE(sat)=1.1Vdc(Max)@IC=4.0Adc •ExcellentSafeOperatingArea •ThesearePb−FreeDevices*

TIP2955

ComplementarySiliconPowerTransistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS •DCCurrentGain−hFE=20-70@IC=4.0Adc •Collector−EmitterSaturationVoltage−VCE(sat)=1.1Vdc(Max)@IC=4.0Adc •ExcellentSafeOperatingArea •ThesearePb−FreeDevices*

TIP2955

SILICONPOWERTRANSISTORS

PNPTIP2955 NPNTIP3055 TheTIP3055isaNPNepitaxial-basetransistorinTO3PNpackage.Itisintendedforpowerswitchingcircuits,seriesandshuntregulators,outputstageandhi-fiamplifiers.ThecomplementaryistheTIP2955ForPNPtypesVoltageandCurentareNegative.Complianceto

TIP2955

PNPPLANARSILICONTRANSISTOR(AUDIOPOWERAMPLIFIERDCTODCCONVERTER)

AudioPowerAmplifier DCtoDCConverter *HighCurrentCapability *HighPowerDissipation *ComplematarytoTIP3055

TIP2955

POWERTRANSISTORSCOMPLEMENTARYSILICON

TIP2955PNP TIP3055NPN 15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS90WATTS ...designedforgeneral–purposeswitchingandamplifierapplications. •DCCurrentGain—hFE=20–70@IC=4.0Adc •Collector–EmitterSaturationVoltage—VCE(sat)=1.1Vdc(Max)@

TIP2955

COMPLEMENTARYSILICONPOWERTRANSISTORS

NPN-->TIP3055 PNP-->TIP2955 Description Thedevicesaremanufacturedinepitaxial-baseplanartechnologyandaresuitableforaudio,powerlinearandswitchingapplications. Features ■Lowcollector-emittersaturationvoltage ■ComplementaryNPN-PNPtransistors Applications ■Gen

TIP2955

POWERTRANSISTORSCOMPLEMENTARYSILICON

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS •DCCurrentGain−hFE=20-70@IC=4.0Adc •Collector−EmitterSaturationVoltage−VCE(sat)=1.1Vdc(Max)@IC=4.0Adc •ExcellentSafeOperatingArea •ThesearePb−FreeDevices*