SFF44N50Z

Avalanche Rated N-channel MOSFET

FDA44N50

iscN-ChannelMOSFETTransistor

FDH44N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=44A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested DESCRIPTION motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FDH44N50

44A,500V,0.12Ohm,N-ChannelSMPSPowerMOSFET

Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature

IXFE44N50Q

HiPerFETPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •Fastintrins

IXFH44N50P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode VDSS=500V ID25=44A RDS(on)≤140mΩ trr≤200ns Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect

IXFH44N50P

iscN-ChannelMOSFETTransistor

IXFK44N50

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features Internationalstandardpackages MoldingepoxiesmeetUL94V-0flammabilityclassification SOT-227BminiBLOCwithaluminiumnitrideisolation LowRDS(on)HDMOS™process
UnclampedInductiveSwitching(UIS

IXFK44N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

IXFK44N50

HiPerFETPowerMOSFETs

IXFK44N50F

HiPerRFPowerMOSFETsF-ClassMegaHertzSwitchingSingleMOSFETDie

SingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features RFCapableMOSFETs DoubleMetalProcessforLowGateResistance AvalancheRated LowPackageInductance FastIntrinsicRectifier

IXFK44N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

IXFK44N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

IXFK44N50P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode VDSS=500V ID25=44A RDS(on)≤140mΩ trr≤200ns Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect

IXFK44N50Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

IXFK44N50Q

HiPerFETPowerMOSFETsQ-CLASS

IXFN44N50

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features Internationalstandardpackages MoldingepoxiesmeetUL94V-0flammabilityclassification SOT-227BminiBLOCwithaluminiumnitrideisolation LowRDS(on)HDMOS™process
UnclampedInductiveSwitching(UIS

IXFN44N50

HiPerFETPowerMOSFETs

IXFN44N50Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •UnclampedInductiveSwitching(UIS)rated •LowRDS(on) •Fastintrinsicdiode •Internationalst

IXFR44N50P

PolarHVHiPerFETPowerMOSFETISOPLUS247

VDSS=500V ID25=24A RDS(on)≤150mΩ trr≤200ns N-ChannelEnhancement AvalancheRated FastIntrinsicDiode Features Internationalstandardisolatedpackage ULrecognizedpackage SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -I