8A super fast recovery diode

FEATURES Superfast recovery times-epitaxial construction. Low forward voltage, high current capability. Hermetically sealed. Low leakage. High surge capability. Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound.

文件：274.35 Kbytes 页数：2 Pages

ASEMI

强元芯电子

ULTRAFAST SOFT RECOVERY DIODE

文件：339.57 Kbytes 页数：3 Pages

NIUHANG

纽航电子

1 KV THREE TO SIX-CHANNEL DIGITAL ISOLATORS

Features  High-speed operation DC to 10 Mbps  No start-up initialization required  Wide Operating Supply Voltage 3.15 – 5.5 V  Up to 1000 VRMS isolation  High electromagnetic immunity  Low power consumption (typical) 2.3 mA per channel at 10 Mbps  Tri-state outputs with ENAB

文件：401.42 Kbytes 页数：23 Pages

SKYWORKS

思佳讯

N-Channel 30-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at t

文件：231.1 Kbytes 页数：3 Pages

VISHAYVishay Siliconix

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