55 AMP (note 1) /60 Volts 7 mO N-Channel Trench Gate MOSFET

文件：43.13 Kbytes 页数：2 Pages

SSDI

55 AMP (note 1) /60 Volts 7 mO N-Channel Trench Gate MOSFET

文件：43.13 Kbytes 页数：2 Pages

SSDI

N-Channel 60-V (D-S) 175C MOSFET

N-Channel 60-V (D-S) 175°C MOSFET 175°C Rated Maximum Junction Temperature TranchFET® Power MOSFETs

文件：49.24 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：645.34 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=100A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：368.87 Kbytes 页数：2 Pages

ISC

无锡固电

60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：650 Kbytes 页数：8 Pages

ONSEMI

安森美半导体