Advanced Power MOSFET

FEATURES ❑ Logic-Level Gate Drive ❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : 10uA (Max.) @ VDS=-200V ❑ Lower RDS(ON) : 0.175 Ω (Typ.)

文件：546.61 Kbytes 页数：7 Pages

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Advanced Power MOSFET

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Advanced Power MOSFET

FEATURES ❑ Logic-Level Gate Drive ❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : 10uA (Max.) @ VDS=-200V ❑ Lower RDS(ON) : 0.175 Ω (Typ.)

文件：546.65 Kbytes 页数：7 Pages

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