Advanced Power MOSFET

FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ 175oC Operating Temperature ❐ Extended Safe Operating Area ❐ Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ❐ Lower RDS(ON) : 0.161 Ω (Typ.)

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FAIRCHILD

仙童半导体

-18 AMP -100 VOLTS 0.20 ohm P-Channel Power MOSFET

FEATURES: • Rugged construction with poly silicon gate • Low RDS(on) and high transconductance • Excellent high temperature stability • Very fast switching speed • Fast recovery and superior dv/dt performance • Increased reverse energy capability • Low input and transfer capacitance for eas

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SSDI

isc P-Channel MOSFET Transistor

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ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体

-18 AMP -100 VOLTS 0.20 ohm P-Channel Power MOSFET

文件：223.94 Kbytes 页数：2 Pages

SSDI

-18 AMP -100 VOLTS 0.20 ohm P-Channel Power MOSFET

文件：223.17 Kbytes 页数：2 Pages

SSDI

-18 AMP -100 VOLTS 0.20 ohm P-Channel Power MOSFET

文件：223.94 Kbytes 页数：2 Pages

SSDI

-18 AMP -100 VOLTS 0.20 ohm P-Channel Power MOSFET

文件：229.84 Kbytes 页数：2 Pages

SSDI

-18 AMP -100 VOLTS 0.20 ohm P-Channel Power MOSFET

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SSDI

-18 AMP -100 VOLTS 0.20 ohm P-Channel Power MOSFET

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SSDI