4.5 AMP 1000 VOLTS 2 ohm N-Channel Power MOSFET

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SSDI

4.5 AMP 1000 VOLTS 2 ohm N-Channel Power MOSFET

SSDI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.75 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED

文件：202.72 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.75 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED

文件：202.72 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Surface-Mount PAR® Transient Voltage Suppressors

FEATURES • Low-profile package - typical height of 0.88 mm • Leadless DFN package with side-wettable flanks suitable for customer AOI (Automatic Optical Inspection) • Ideal for automated placement • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 18

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VISHAYVishay Siliconix

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