DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features Very Low Forward Voltage Drop Guard Ring Construction for Transient Protection High Conductance Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 4, 5 and 6)

文件：123.73 Kbytes 页数：3 Pages

DIODES

美台半导体

N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

文件：664.79 Kbytes 页数：7 Pages

Samhop

三合微科

Low On Resistance (75m MAX)

Features  Low On Resistance (75m MAX)  High Continuous Load Current (3.4A)  Low Input Control Power Consumption (2mA TYP)  High Input-to-Output Isolation (3750V MIN)  Long Life / High Reliability  RoHS / Pb-Free / REACH Compliant Applications  Multiplexers  Meter reading system

文件：228.7 Kbytes 页数：6 Pages

SOLIDSTATE

Low On Resistance (75m MAX)

Features  Low On Resistance (75m MAX)  High Continuous Load Current (3.4A)  Low Input Control Power Consumption (2mA TYP)  High Input-to-Output Isolation (3750V MIN)  Long Life / High Reliability  RoHS / Pb-Free / REACH Compliant Applications  Multiplexers  Meter reading system

文件：236.61 Kbytes 页数：6 Pages

SOLIDSTATE

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.00655 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS (ON). ● Rugged and reliable. ● Surface Mount Package.

文件：386.77 Kbytes 页数：5 Pages

Samhop

三合微科

Surface Mount N-Channel Enhancement Mode MOSFET

Features: * Super high dense cell design for low RDS(ON) RDS(ON)

文件：458.96 Kbytes 页数：6 Pages

WEITRON

P-Channel E nhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET FEATURES Surface Mount Package. Super high dense cell design for low RDS(ON). Rugged and reliable.

文件：550.78 Kbytes 页数：7 Pages

Samhop

三合微科

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Surface Mount Package. ● Super high dense cell design for low RDS(ON). ● Rugged and reliable.

文件：649.23 Kbytes 页数：7 Pages

Samhop

三合微科

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.00654 Mbytes 页数：9 Pages

VBSEMI

微碧半导体