SD2941-10数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The SD2941-10 is a gold metalized N-channel MOS field-effect RF power transistor, intendedfor use in 28 V to 50 V dc large signal applications up to 230 MHz. It offers 25% lowerRDS(on) than the industry standard, with 20% higher PSAT than ST'sSD2931-10 device. The SD2941-10 is housed in the low thermal M174 non-pedestal package,offering 25% lower thermal resistance than the industry standard, thus rendering it the\"best-in-class\" transistor for ISM applications, where reliability and ruggedness are criticalfactor.

特性 Features

• Gold metallization
• Excellent thermal stability
• Common source configuration
• POUT = 175 W min. with 15 dB gain @ 175 MHz, 50 V
• POUT = 135 W typ. with 14 dB gain @ 123 MHz, 28 V
• Low RDS(on)
• Thermally enhanced packaging for lower junction temperatures
• In compliance with the 2002/95/EC1 European directive

简介

SD2941-10属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的SD2941-10晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。