SD2931-10数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The SD2931-10 is a gold metallized N-channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large signal applications up to 230 MHz.
The SD2931-10 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25 % lower thermal resistance), representing the best-in-class transistors for ISM applications, where reliability and ruggedness are critical factors.

特性 Features

• Gold metallization
• Excellent thermal stability
• Common source configuration
• POUT = 150 W min. with 14 dB gain @ 175 MHz
• Thermally enhanced packaging for lower junction temperatures

简介

SD2931-10属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的SD2931-10晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。