SD2931-12MR数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The SD2931-12MR is a gold metallized N-channel MOS field-effect RF power transistor. Electrically identical to the standard SD2931 MOSFET, it is used for 50 V DC large signal applications up to 230 MHz.
The SD2931-12MR is mechanically compatible with the SD2931 but offers better thermal capability (25% lower thermal resistance), representing the best-in-class in transistors for ISM applications, where reliability and ruggedness are critical factors.
The SD2931-12MR benefits from the latest generation of environmentally designed packing, ruggedized against cyclic high moisture operation and severe storage conditions.

特性 Features

• Gold metallization
• Excellent thermal stability
• Common source push-pull configuration
• POUT = 150 W min. with 14 dB gain @ 175 MHz
• Thermally enhanced packing for lower junction temperatures
• GFS and VGS sort marked on unit
• Moisture resistant package specifically designed to operate in extreme environments

简介

SD2931-12MR属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的SD2931-12MR晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。