SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Low Reverse Recovery Time • Low Reverse Capacitance • Lead Free Finish, RoHS Compliant (Note 2)

文件：221.73 Kbytes 页数：3 Pages

DIODES

美台半导体

Si-Schottky-Barrier Diodes

Schottky Barrier Diodes • Nominal current 0.2 A • Repetitive peak reverse voltage 20...40 V • Glass case DO-35 • Weight approx. 0.13 g • Equivalent SMD-version LL103C...LL103A • S

文件：57.24 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

Small-Signal Diode

Features ◆ For general purpose applications ◆ The SD103 series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. ◆ The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for f

文件：135.78 Kbytes 页数：3 Pages

GOOD-ARK

固锝电子

Small Signal Schottky Diodes

Features • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Low Reverse Recovery Time • Low Reverse Capacitance • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection

文件：121.92 Kbytes 页数：3 Pages

MCC

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance Lead free in compliance with EU RoHS 2011/65/EU directive

文件：340.3 Kbytes 页数：4 Pages

PANJIT

強茂

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance Lead free in compliance with EU RoHS 2011/65/EU directive

文件：340.3 Kbytes 页数：4 Pages

PANJIT

強茂

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance Lead free in compliance with EU RoHS 2011/65/EU directive

文件：340.3 Kbytes 页数：4 Pages

PANJIT

強茂

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance Lead free in compliance with EU RoHS 2011/65/EU directive

文件：340.3 Kbytes 页数：4 Pages

PANJIT

強茂

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance Lead free in compliance with EU RoHS 2011/65/EU directive

文件：340.3 Kbytes 页数：4 Pages

PANJIT

強茂

Small Signal Schottky Diodes

FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level

文件：85.19 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司