10A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

文件：64.26 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

10A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

文件：64.26 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

Small Signal Switching Diodes

Features ◇ For general purpose applications ◇ Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic le

文件：159.63 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • The SD103 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring.The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes

文件：56.44 Kbytes 页数：3 Pages

JINGHENG

晶恒

SMALL SIGNAL SCHOTTKY DIODES

FEATURES For general purpose applications fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and cou

文件：433.58 Kbytes 页数：2 Pages

SAMYANG

三阳电子

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Low Reverse Recovery Time • Low Reverse Capacitance • Both normal and Pb free product are available : Normal : 80~95 Sn, 5~20 Pb Pb free: 98.5 Sn above

文件：41.44 Kbytes 页数：2 Pages

PANJIT

強茂

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance Lead free in compliance with EU RoHS 2011/65/EU directive

文件：340.3 Kbytes 页数：4 Pages

PANJIT

強茂

0.35AMP Schottky Barrier Rectifiers

Features * Low Forward Voltage Drop * Guard Ring Construction for Transient Protection * Low Reverse Recovery Time * Low Reverse Capacitance

文件：364.3 Kbytes 页数：2 Pages

SECOS

喜可士

SILICON SCHOTTKY BARRIER DIODES

SILICON SCHOTTKY BARRIER DIODES for general purpose applications The SD103A, B, C is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupl

文件：121.99 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

Small Signal Schottky Barrier Diodes

Small Signal Schottky Barrier Diodes Features • Low forward voltage drop • Guard ring construction for transient protection • Low reverse recovery time • Low reverse capacitance • RoHS compliant

文件：238.54 Kbytes 页数：3 Pages

TAITRON