SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Low Reverse Recovery Time • Low Reverse Capacitance • Both normal and Pb free product are available : Normal : 80~95 Sn, 5~20 Pb Pb free: 98.5 Sn above

文件：41.44 Kbytes 页数：2 Pages

PANJIT

強茂

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance Lead free in compliance with EU RoHS 2011/65/EU directive

文件：340.3 Kbytes 页数：4 Pages

PANJIT

強茂

0.35AMP Schottky Barrier Rectifiers

Features * Low Forward Voltage Drop * Guard Ring Construction for Transient Protection * Low Reverse Recovery Time * Low Reverse Capacitance

文件：364.3 Kbytes 页数：2 Pages

SECOS

喜可士

SILICON SCHOTTKY BARRIER DIODES

SILICON SCHOTTKY BARRIER DIODES for general purpose applications The SD103A, B, C is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupl

文件：121.99 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

Schottky Barrier Diode

Schottky Barrier Diode ◇ Low Forward Voltage Schottky Rectifier ◇ SOD323F Thin SMD package (Fig-1) ◇ RoHS compliant / Green EMC ◇ Matte Tin (Sn) Lead finish ◇ Moisture Level Sensitivity 1 ◇ Cathode Band / Device marking

文件：361.54 Kbytes 页数：2 Pages

GXELECTRONICS

星合电子

350 mA Surface Mounted Schottky Barrier Rectifiers Low Forward Voltage Drop

FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Negligible Reverse Recovery Time ● Low Reverse Capacitance

文件：561.37 Kbytes 页数：2 Pages

FCI

富加宜

SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Low Reverse Recovery Time • Low Reverse Capacitance • Lead Free Finish, RoHS Compliant (Note 2)

文件：221.73 Kbytes 页数：3 Pages

DIODES

美台半导体

Small Signal Schottky Diodes

FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level appl

文件：109.91 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level appl

文件：109.91 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：S5；Package：SOD-123；Small Signal Schottky Diodes

FEATURES • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications • Other applications are click suppression, efficient full wave bridges in telephone subsets, and blo

文件：76.5 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司