Schottky Barrier Diode

FEATURES ● Low forward voltage drop. ● Guard ring construction for transient protection. ● Low reverse recovery time. ● Low reverse capacitance. APPLICATIONS ● Schottky barrier application.

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CHENDA

辰达半导体

丝印：S4；Package：SOD-523；Schottky Barrier Diode

FEATURES • Low Forward Voltage Drop. • Guard Ring Construction For Transient Protection. • Negligible Reverse Recovery Time. • Low Reverse Capacitance. APPLICATIONS • Schotty barrier switching.

文件：542.19 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：S4；Package：SOD-523；Surface Mount Schottky Barrier Diodes

Features •Low Forward Voltage

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GWSEMI

唯圣电子

Low VF SMD Schottky Barrier Diode

Features ◇ Low power loss,high current capability ◇ Low VF, low reverse current ◇ Ultra small SMD package ◇ Moisture sensitivity level 1 ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) with suffix G on packing code and prefix G on date code Mechanical Data ◇ Case :

文件：142.08 Kbytes 页数：3 Pages

TSC

台湾半导体

Low VF SMD Schottky Barrier Diode

Features ◇ Low power loss,high current capability ◇ Low VF, low reverse current ◇ Ultra small SMD package ◇ Moisture sensitivity level 1 ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) with suffix G on packing code and prefix G on date code Mechanical Data ◇ Case :

文件：142.08 Kbytes 页数：3 Pages

TSC

台湾半导体

Low VF SMD Schottky Barrier Diode

Features ◇ Low power loss,high current capability ◇ Low VF, low reverse current ◇ Ultra small SMD package ◇ Moisture sensitivity level 1 ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) with suffix G on packing code and prefix G on date code Mechanical Data ◇ Case :

文件：142.08 Kbytes 页数：3 Pages

TSC

台湾半导体

Silicon Schottky Barrier Diodes for general purpose applications?

Silicon Schottky Barrier Diodes for general purpose applications The SD103A, B, C is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupli

文件：194.1 Kbytes 页数：3 Pages

SEMTECH

先之科

Small signal schottky diodes

Features ● Low Reverse Recovery Time ● Low Reverse Capacitance ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection

文件：88.54 Kbytes 页数：3 Pages

CHENYI

商朗电子

SCHOTTKY DIODES

[ITT Components] SCHOTTKY DIODES

文件：337.56 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Schottky Diodes

FEATURES ♦ For general purpose applications. ♦ The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fa

文件：132.76 Kbytes 页数：3 Pages

GE