Tiny 1.2A Synchronous Buck Regulator with Power Good

文件：1.27782 Mbytes 页数：18 Pages

SEMTECH

先之科

SFP2*1 CAGECONN

文件：283.7 Kbytes 页数：3 Pages

VITALCONNVITALCONN ELECTRONICS HK LTD.

威泰创电子威泰创电子科技(深圳)有限公司

Drop Wire Clamps for CATV and Telephone Cable

文件：2.5061 Mbytes 页数：16 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

Package：法兰安装；包装：盒 类别：传感器，变送器 磁性传感器 - 位置，接近，速度（模块） 描述：SEN PROX MAG RECT NC

Carlo Gavazzi Inc.

丝印：SC250N12G3AG；Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mΩ typ., 239 A in a STPAK package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Application

文件：323.6 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：SC245SEP；Package：TSSOP；SN54SC245-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Octal Bus Transceivers With 3-State Outputs

1 Features • Vendor item drawing available, VID V62/23616 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up

文件：921.15 Kbytes 页数：25 Pages

TI

德州仪器

丝印：SC245SEP；Package：TSSOP；SN54SC245-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Octal Bus Transceivers With 3-State Outputs

1 Features • Vendor item drawing available, VID V62/23616 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up

文件：924.77 Kbytes 页数：26 Pages

TI

德州仪器

丝印：SC245SEP；Package：TSSOP；SN54SC245-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Octal Bus Transceivers With 3-State Outputs

1 Features • Vendor item drawing available, VID V62/23616 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up

文件：889.06 Kbytes 页数：25 Pages

TI

德州仪器

丝印：SC245SEP；Package：TSSOP；SN54SC245-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Octal Bus Transceivers With 3-State Outputs

1 Features • Vendor item drawing available, VID V62/23616 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up

文件：889.06 Kbytes 页数：25 Pages

TI

德州仪器

丝印：SC240SEP；Package：TSSOP；SN54SC8T240-SEP Radiation Tolerant, Octal Inverting Buffers/Drivers with 3-State Outputs

1 Features • Vendor item drawing available, VID V62/25630-01XE • Radiation - Total Ionizing Dose (TID): – TID characterized up to 50krad(Si) – TID performance assurance up to 30 krad(Si) – Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si) • Radiation - Single-Eve

文件：1.14252 Mbytes 页数：27 Pages

TI

德州仪器