SiC肖特基二极管

Jingdao

晶导

650 V, 10 A low VF power Schottky silicon carbide diode

Features • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK2 compliant component

文件：395.95 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

650 V, 10 A low VF power Schottky silicon carbide diode

Features • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK2 compliant component

文件：395.95 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

650 V, 10 A power Schottky silicon carbide diode

Features • Less than 1 mm height package • High creepage package • No or negligible reverse recovery • Temperature independent switching behavior • High forward surge capability • Very low drop forward voltage • Power efficient product • ECOPACK2 compliant component Description This 10

文件：379.31 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体