High Voltage Fast -Switching NPN Power Transistor

General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA

文件：417.46 Kbytes 页数：5 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

High Voltage Fast-SwitchingNPN Power Transistor

General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA

文件：341.49 Kbytes 页数：5 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

High Voltage Fast-Switching NPN Power Transistor

General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA

文件：233.03 Kbytes 页数：5 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

HighVoltageFast-SwitchingNPNPowerTransistor

General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA

文件：291.74 Kbytes 页数：5 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

High Voltage Fast-Switching NPN Power Transistor

General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA ◆ Built-in freewheeling diode

文件：365.71 Kbytes 页数：5 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Super barrier rectifier

[APD Semiconductor, Inc.] ELECTRICAL: * Low Forward Voltage Drop * Low Reverse Leakage * Reliable High Temperature Operation * Super Barrier Design * Softest, fast switching capability * 125oC Operating Junction Temperature

文件：69.42 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1A SBR SUPER BARRIER RECTIFIER

Features • Low Forward Voltage Drop • Low Reverse Leakage • Excellent High Temperature Stability • Patented Super Barrier Rectifier Technology • Soft, fast switching capability • +150°C Operating Junction Temperature • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

文件：105.27 Kbytes 页数：4 Pages

DIODES

美台半导体

1.0A SBR® SUPER BARRIER RECTIFIER

Features Ultra Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability +150°C Operating Junction Temperature Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (No

文件：264.09 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：D4；Package：X1-DFN1411-3；1.0A SBR® SUPER BARRIER RECTIFIER

Features Ultra Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability +150°C Operating Junction Temperature Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (No

文件：264.09 Kbytes 页数：4 Pages

DIODES

美台半导体

15A SBR SUPER BARRIER RECTIFIER PowerDI5

Features Low Forward Voltage Drop (VF) Helps Minimize Power Losses Patented Super Barrier Rectifier Technology (SBR® ) Excellent Stability at Higher Temperatures Thermally Efficient Package for Cooler Running Applications Less than 1.1mm Package Profile Ideal for Thin Applications Lead-Free

文件：796.97 Kbytes 页数：6 Pages

DIODES

美台半导体